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1997 | 92 | 5 | 953-957
Article title

Exciton States in Type-II ZnSe/BeTe Quantum Wells

Content
Title variants
Languages of publication
EN
Abstracts
EN
We present an optical investigation of novel heterostructures based on beryllium chalcogenides with a type-I and type-II band alignment. In the type-II quantum well structures (ZnSe/BeTe) we observed a strong exciton transition involving an electron confined in the conduction band well and a hole localized in the valence band barrier (both in ZnSe layer). This transition is drastically broadened by the temperature increase due to enhanced exciton-acoustic phonon interaction.
Keywords
EN
Year
Volume
92
Issue
5
Pages
953-957
Physical description
Dates
published
1997-11
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z522kz
Identifiers
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