PL EN


Preferences help
enabled [disable] Abstract
Number of results
1997 | 92 | 5 | 950-952
Article title

Photoionization of Ge¯-DX State in GaAs

Content
Title variants
Languages of publication
EN
Abstracts
EN
We have determined the efficiency of photoionization of Ge¯-DX state in GaAs as a function of photon energy. The optical ionization energy derived from the fitting is about 1.0 eV. It proves a large difference between optical and thermal ionization energies and confirms that for Ge-impurity, the broken-bond model and large lattice relaxation are valid and not the breathing mode with small lattice relaxation, resulting from the calculations presented for Ge-impurity in T.M. Schmidt, A. Fazzio, M.J. Caldas, Mater. Sci. Forum 196/201, 273 (1995).
Keywords
EN
Publisher

Year
Volume
92
Issue
5
Pages
950-952
Physical description
Dates
published
1997-11
Contributors
  • High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
author
  • High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z521kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.