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Number of results
1997 | 92 | 5 | 935-939
Article title

Effect of Epitaxial Layer Thickness on Built-in Electric Field in Region of AlGaAs/SI-GaAs Interface: A Photoreflectance Study

Content
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Languages of publication
EN
Abstracts
EN
We present a study of detailed line shapes of photoreflectance spectra for Al_{0.3}Ga_{0.7} As/SI-GaAs epitaxial layers grown by MBE. All measurements were performed at 80 K under UHV conditions with a special care for the samples surface quality. A set of the photoreflectance spectra was collected for photon energies close to the GaAs and Al_{0.3}Ga_{0.7}As band gaps (E_{0}). The photoreflectance spectra originated in the vicinity of the Al_{0.3}Ga_{0.7}As/SI-GaAs interface were analyzed using the complex Airy function model of Franz-Keldysh oscillations. To examine the effect of the epitaxial layer thickness on parameters characterizing the interface, a step-by-step chemical etching was applied for stripping the top layers. The built-in electric field intensity, field inhomogeneity and phenomenological broadening parameter for interface regions were determined as a function of the epilayer thickness.
Keywords
EN
Contributors
author
  • Institute of Physics, M. Curie-Skłodowska University, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland
author
  • Institute of Physics, M. Curie-Skłodowska University, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland
author
  • Institute of Applied Physics, State University, Minsk, Belarus
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z518kz
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