Effect of Epitaxial Layer Thickness on Built-in Electric Field in Region of AlGaAs/SI-GaAs Interface: A Photoreflectance Study

• Authors: T. Ochalski , J. Żuk , L. Vlasukova
• Languages of publication: EN

Abstracts

EN

We present a study of detailed line shapes of photoreflectance spectra for Al_{0.3}Ga_{0.7} As/SI-GaAs epitaxial layers grown by MBE. All measurements were performed at 80 K under UHV conditions with a special care for the samples surface quality. A set of the photoreflectance spectra was collected for photon energies close to the GaAs and Al_{0.3}Ga_{0.7}As band gaps (E_{0}). The photoreflectance spectra originated in the vicinity of the Al_{0.3}Ga_{0.7}As/SI-GaAs interface were analyzed using the complex Airy function model of Franz-Keldysh oscillations. To examine the effect of the epitaxial layer thickness on parameters characterizing the interface, a step-by-step chemical etching was applied for stripping the top layers. The built-in electric field intensity, field inhomogeneity and phenomenological broadening parameter for interface regions were determined as a function of the epilayer thickness.

Keywords

EN

78.66.Fd; 78.20.-e

Discipline

• 78.66.Fd: III-V semiconductors
• 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 5
• Pages: 935-939

Dates

published

1997-11

Contributors

author

T. Ochalski

• Institute of Physics, M. Curie-Skłodowska University, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland

author

J. Żuk

• Institute of Physics, M. Curie-Skłodowska University, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland

author

L. Vlasukova

• Institute of Applied Physics, State University, Minsk, Belarus

Identifiers

DOI

10.12693/APhysPolA.92.935