Changes of Electronic Structure of SnTe Due to High Concentration of Sn Vacancies

• Authors: J. Mašek , D.N. Nuzhnyj
• Languages of publication: EN

Abstracts

EN

Non-stoichiometric Sn_{1-y}Te is a strongly degenerated n-type semiconductor. This is important for understanding unusual features of magnetic behaviour of Sn_{1-x}Gd_{x}Te where the relative positions of the Fermi energy and the atomic d-level of Gd govern the exchange coupling. The influence of the Sn vacancies on the band structure cannot be neglected if their concentration reaches a few atomic percent. We address this problem by using a tight-binding coherent potential approach and show that although the character of the bands remains unchanged, they are modified so that ε_{d} can come out above the heavy-hole band.

Keywords

EN

71.55.Jv; 71.20.Nr

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 5
• Pages: 915-918

Dates

published

1997-11

Contributors

author

J. Mašek

• Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 180 40 Praha 8, Czech Republic

author

D.N. Nuzhnyj

• Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 180 40 Praha 8, Czech Republic