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1997 | 92 | 5 | 915-918
Article title

Changes of Electronic Structure of SnTe Due to High Concentration of Sn Vacancies

Content
Title variants
Languages of publication
EN
Abstracts
EN
Non-stoichiometric Sn_{1-y}Te is a strongly degenerated n-type semiconductor. This is important for understanding unusual features of magnetic behaviour of Sn_{1-x}Gd_{x}Te where the relative positions of the Fermi energy and the atomic d-level of Gd govern the exchange coupling. The influence of the Sn vacancies on the band structure cannot be neglected if their concentration reaches a few atomic percent. We address this problem by using a tight-binding coherent potential approach and show that although the character of the bands remains unchanged, they are modified so that ε_{d} can come out above the heavy-hole band.
Keywords
EN
Publisher

Year
Volume
92
Issue
5
Pages
915-918
Physical description
Dates
published
1997-11
Contributors
author
  • Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 180 40 Praha 8, Czech Republic
author
  • Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 180 40 Praha 8, Czech Republic
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z514kz
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