Infrared Luminescence in Er and Er+O Implanted 6H SiC

• Authors: A. Kozanecki , W. Jantsch , W. Heis , G. Prechtl , B. Sealy , C. Jeynes
• Languages of publication: EN

Abstracts

EN

Photoluminescence in the neighbourhood of 1.54 μm due to the ^{4}I_{13/2}-^{4}I_{15/2} intra-4f-shell transitions of Er^{3+} ions in 6H SiC is studied. Effects of oxygen coimplantation is also investigated. No difference in the photoluminescence spectra of Er only and Er+O implanted SiC was found. It is concluded that the emission around 1.54 μm in SiC:Er originates from erbium-oxygen complexes, which are formed as a result of thermal annealing.

Keywords

EN

61.72.Ww; 71.55.-i; 78.55.-m

Discipline

• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)
• 71.55.-i: Impurity and defect levels

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 5
• Pages: 879-882

Dates

published

1997-11

Contributors

author

A. Kozanecki

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

W. Jantsch

• Johannes Kepler Universität, 4040, Linz, Austria

author

W. Heis

• Johannes Kepler Universität, 4040, Linz, Austria

author

G. Prechtl

• Johannes Kepler Universität, 4040, Linz, Austria

author

B. Sealy

• Surrey Centre for Research in Ion Beam Applications, University of Surrey, Guildford, Surrey, GU2 5XH, UK

author

C. Jeynes

• Surrey Centre for Research in Ion Beam Applications, University of Surrey, Guildford, Surrey, GU2 5XH, UK

Identifiers

DOI

10.12693/APhysPolA.92.879