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1997 | 92 | 5 | 879-882
Article title

Infrared Luminescence in Er and Er+O Implanted 6H SiC

Content
Title variants
Languages of publication
EN
Abstracts
EN
Photoluminescence in the neighbourhood of 1.54 μm due to the ^{4}I_{13/2}-^{4}I_{15/2} intra-4f-shell transitions of Er^{3+} ions in 6H SiC is studied. Effects of oxygen coimplantation is also investigated. No difference in the photoluminescence spectra of Er only and Er+O implanted SiC was found. It is concluded that the emission around 1.54 μm in SiC:Er originates from erbium-oxygen complexes, which are formed as a result of thermal annealing.
Keywords
EN
Year
Volume
92
Issue
5
Pages
879-882
Physical description
Dates
published
1997-11
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z505kz
Identifiers
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