Luminescence Dynamics of Exciton Replicas in Homoepitaxial GaN Layers

• Authors: K. Korona , J. Baranowski , K. Pakuła , B. Monemar , J. Bergman , I. Grzegory , S. Porowski
• Languages of publication: EN

Abstracts

EN

Photoluminescence of excitons and their phonon replicas in homoepitaxial MOCVD-grown gallium nitride (GaN) layers have been studied by picosecond (ps) time-resolved photoluminescence spectroscopy. The time-resolved photoluminescence spectroscopy has shown that the free excitons and their replicas have the fastest dynamics (decay time of about 100 ps). Then, the excitons-bound-to-donors emission rises (with the rise time similar to the free excitons decay time) and decays with t=300 ps. The excitons-bound-to-acceptors has the slowest decay (about 500 ps). It has been found that the ratio of excitons-bound-to-acceptors and excitons-bound-to-donors amplitudes and their decay times are different for 1-LO replicas and then for zero-phonon lines, whereas the ratio of amplitudes and the decay time of the 2-LO replicas are similar to the ones of the zero-phonon lines.

Keywords

EN

71.35.-y; 78.47.+p; 78.55.Cr

Discipline

• 78.55.Cr: III-V semiconductors
• 71.35.-y: Excitons and related phenomena

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 4
• Pages: 841-844

Dates

published

1997-10

Contributors

author

K. Korona

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

J. Baranowski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

K. Pakuła

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

B. Monemar

• Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden

author

J. Bergman

• Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden

author

I. Grzegory

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

S. Porowski

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.92.841