Growth and Electrical Properties of Phosphorus Doped Zn_{1-x}Mn_{x}Te Crystals

• Authors: Le Van Khoi , J. Jaroszyński , B. Witkowska , A. Mycielski , R.R. Gałązka , J. Cisowski
• Languages of publication: EN

Abstracts

EN

The high pressure Bridgman technique was used to grow Zn_{1-x}Mn_{x}Te:P crystals. Under the N_{2} pressure of 30 atm., we obtained the p^{+}-Zn_{1-x}Mn_{x}Te single crystals 8-10 mm in diameter, with free-carrier densities as high as p ≈ 8×10^{18} cm^{-3} and the room temperature conductivity σ(RT) ≈ 30 Ω^{-1}cm^{-1}. Magnetoresistance measurements were carried out down to 1.3 K and up to 6 T. In Zn_{1-x}Mn_{x}Te:P a strong increase in the acceptor binding energy as well as an immense (ρ(0,1.3K)/ρ(6T,1.3K) > 10^{3}) negative magnetoresistance are observed, by contrast, not seen in diamagnetic ZnTe:P. It is shown that these effects come from the formation of bound magnetic polarons and their destruction by an external magnetic field.

Keywords

EN

71.30.+h; 71.55.Jv; 72.80.Ga

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 4
• Pages: 833-836

Dates

published

1997-10

Contributors

author

Le Van Khoi

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Jaroszyński

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

B. Witkowska

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Mycielski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

R.R. Gałązka

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Cisowski

• Department of Solid State Physics, Polish Academy of Science Wandy 3, 41-800 Zabrze, Poland