PL EN


Preferences help
enabled [disable] Abstract
Number of results
1997 | 92 | 4 | 833-836
Article title

Growth and Electrical Properties of Phosphorus Doped Zn_{1-x}Mn_{x}Te Crystals

Content
Title variants
Languages of publication
EN
Abstracts
EN
The high pressure Bridgman technique was used to grow Zn_{1-x}Mn_{x}Te:P crystals. Under the N_{2} pressure of 30 atm., we obtained the p^{+}-Zn_{1-x}Mn_{x}Te single crystals 8-10 mm in diameter, with free-carrier densities as high as p ≈ 8×10^{18} cm^{-3} and the room temperature conductivity σ(RT) ≈ 30 Ω^{-1}cm^{-1}. Magnetoresistance measurements were carried out down to 1.3 K and up to 6 T. In Zn_{1-x}Mn_{x}Te:P a strong increase in the acceptor binding energy as well as an immense (ρ(0,1.3K)/ρ(6T,1.3K) > 10^{3}) negative magnetoresistance are observed, by contrast, not seen in diamagnetic ZnTe:P. It is shown that these effects come from the formation of bound magnetic polarons and their destruction by an external magnetic field.
Keywords
EN
Publisher

Year
Volume
92
Issue
4
Pages
833-836
Physical description
Dates
published
1997-10
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Department of Solid State Physics, Polish Academy of Science Wandy 3, 41-800 Zabrze, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z442kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.