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We report on iodine doping of molecular beam epitaxy (MBE)-grown Cd(Mn)Te quasi-bulk films and modulation-doped CdTe/Cd_{1-y}Mg_{y}Te two-dimensional (2D) single quantum well structures. Modulation doping with iodine of CdTe/Cd_{1-y}Mg_{y}Te structures resulted in fabrication of a 2D electron gas with mobility exceeding 10^{5} cm^{2}/(V s). This is the highest mobility reported in wide-gap II-VI materials.