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1997 | 92 | 4 | 824-828
Article title

Theoretical and Experimental Study of the Radiative Decay Process in a Modulation Doped GaAs/AlGaAs Heterointerface

Content
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Languages of publication
EN
Abstracts
EN
We have theoretically and experimentally investigated the radiative recombination process in an n-type modulation doped GaAs/Al_{0.35}Ga_{0.65}As heterostructure. The dynamical reshaping of the potential profile across the heterojunction, and the decay of the spatially indirect radiative recombination between electrons in the two-dimensional electron gas and photo-created holes, have been numerically simulated for various values of the electric field across the heterojunction. Optical matrix elements were deduced from a self-consistent solution of the coupled Schrodinger and Poisson equations at every discrete point of time. The calculated recombination energies and integrated luminescence intensities were compared with experimental data from time-resolved photoluminescence measurements on an 800 Å wide GaAs/AlGaAs heterostructure.
Keywords
EN
Publisher

Year
Volume
92
Issue
4
Pages
824-828
Physical description
Dates
published
1997-10
Contributors
author
  • Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden
author
  • Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden
author
  • Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden
author
  • Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden
author
  • QUEST Center, University of California at Santa Barbara, Santa Barbara, CA 93106, USA
author
  • QUEST Center, University of California at Santa Barbara, Santa Barbara, CA 93106, USA
author
  • QUEST Center, University of California at Santa Barbara, Santa Barbara, CA 93106, USA
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z440kz
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