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1997 | 92 | 4 | 785-788
Article title

Calculations of Point Defects in AlN and GaN; Lattice Relaxation Effects

Content
Title variants
Languages of publication
EN
Abstracts
EN
Native defects (vacancies, antisites and interstitials) and substitutional impurities (Mg, Zn, and C) in cubic GaN and AlN are studied by means of ab initio theoretical calculations. We examine the energetic positions of the defect levels and lattice relaxations effects. Whereas small relaxations are found in the case of vacancies, the calculations predict that large atomic displacements are associated with antisites. We also discuss the metastable behavior of the nitrogen antisite.
Keywords
EN
Publisher

Year
Volume
92
Issue
4
Pages
785-788
Physical description
Dates
published
1997-10
Contributors
author
  • High Pressure Research Center PAN, Sokołowska 29, 01-142 Warsaw, Poland
  • Institute of Physics and Astronomy, University of Aarhus, 8000 Aarhus C, Denmark
author
  • Institute of Physics and Astronomy, University of Aarhus, 8000 Aarhus C, Denmark
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z431kz
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