Photoluminescence Studies of Cubic Phase GaN Grown by Molecular Beam Epitaxy on (001) Silicon Covered with Sic Layer

• Authors: M. Godlewski , V. Ivanov , J. Bergman , B. Monemar , A. Barski , R. Langer
• Languages of publication: EN

Abstracts

EN

In this work we evaluate optical properties of cubic phase GaN epilayers grown on top of (001) silicon substrate prepared by a new process. Prior to the growth Si substrate was annealed at 1300-1400°C in propane. The so-prepared substrate is covered with a thin (≈ 4 nm) SiC wafer, which allowed a successful growth of good morphological quality cubic phase GaN epilayers. The present results confirm recent suggestion on smaller ionization energies of acceptors in cubic phase GaN epilayers.

Keywords

EN

71.55.Eq; 78.47.+p

Discipline

• 71.55.Eq: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 4
• Pages: 777-780

Dates

published

1997-10

Contributors

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

V. Ivanov

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Bergman

• Dept. Phys. and Meas. Technology, Linköping University, 581 83 Linköping, Sweden

author

B. Monemar

• Dept. Phys. and Meas. Technology, Linköping University, 581 83 Linköping, Sweden

author

A. Barski

• CEA/Grenoble, DRFMC/SP2M, 17 r. des Martyrs, 38054 Grenoble, France

author

R. Langer

• CEA/Grenoble, DRFMC/SP2M, 17 r. des Martyrs, 38054 Grenoble, France

Identifiers

DOI

10.12693/APhysPolA.92.777