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1997 | 92 | 4 | 777-780
Article title

Photoluminescence Studies of Cubic Phase GaN Grown by Molecular Beam Epitaxy on (001) Silicon Covered with Sic Layer

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EN
Abstracts
EN
In this work we evaluate optical properties of cubic phase GaN epilayers grown on top of (001) silicon substrate prepared by a new process. Prior to the growth Si substrate was annealed at 1300-1400°C in propane. The so-prepared substrate is covered with a thin (≈ 4 nm) SiC wafer, which allowed a successful growth of good morphological quality cubic phase GaN epilayers. The present results confirm recent suggestion on smaller ionization energies of acceptors in cubic phase GaN epilayers.
Keywords
EN
Publisher

Year
Volume
92
Issue
4
Pages
777-780
Physical description
Dates
published
1997-10
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Dept. Phys. and Meas. Technology, Linköping University, 581 83 Linköping, Sweden
author
  • Dept. Phys. and Meas. Technology, Linköping University, 581 83 Linköping, Sweden
author
  • CEA/Grenoble, DRFMC/SP2M, 17 r. des Martyrs, 38054 Grenoble, France
author
  • CEA/Grenoble, DRFMC/SP2M, 17 r. des Martyrs, 38054 Grenoble, France
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z429kz
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