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1997 | 92 | 4 | 737-741
Article title

Some Optical and Epr Properties of Strain-Free GaN Crystals Obtained by Ammono Method

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Languages of publication
EN
Abstracts
EN
AMMONO GaN is grown spontaneously from ammonia solution in form of regular, well shaped, few micrometer crystals. Photoluminescence spectra of these crystals are characterized by fixed positions of very narrow exciton lines (FWHM down to 1 meV), where free excitons A, B, C, resolved two donor bound excitons and acceptor bound exciton are visible. Fixed position of exciton lines is in contrast to small changes of line energies which have been always observed for epitaxial GaN layers because of strain present in them. Free electron concentration of AMMONO GaN is less than few times 10^{15} cm^{-3}, as estimated from EPR signal of shallow donor. The above-mentioned facts qualified these crystals as state of the art strain-free, model material for basic parameter measurements of GaN. In this work, results of PL and EPR measurements performed on AMMONO GaN crystals are presented and discussed.
Keywords
EN
Publisher

Year
Volume
92
Issue
4
Pages
737-741
Physical description
Dates
published
1997-10
Contributors
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
  • Institute of Theoretical Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
  • Dept. of Chemistry, Warsaw Univ. of Technology, Noakowskiego 4, 00-661 Warsaw, Poland
  • Dept. of Chemistry, Warsaw Univ. of Technology, Noakowskiego 4, 00-661 Warsaw, Poland
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z419kz
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