Transport Properties of Silicon δ-Doped Gaas in High Electron Density Regime

• Authors: A.V. Buyanov , P.O. Holtz , G. Pozina , B. Monemar , J. Thordson , T.G. Andersson
• Languages of publication: EN

Abstracts

EN

We report results for Si layers embedded in GaAs, extending from the delta-doped (δ-doped) range up to 6 monolayers derived by means of variable temperature resistivity and Hall effect measurements, secondary ion mass spectrometry and high resolution X-ray diffractometry techniques. The conductivity transition from free carrier transport in ordered δ-layers (<1 ML) to strongly-localized two-dimensional variable range hopping transport under potential fluctuation disordered conditions (>4 ML) is clearly observed. This observation is in good agreement with the secondary ion mass spectrometry and high resolution X-ray diffractometry data. Results from the intermediate case with 2-3 MLs are also discussed.

Keywords

EN

72.60.+g; 61.72.Vv; 68.55.Ln

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 4
• Pages: 727-732

Dates

published

1997-10

Contributors

author

A.V. Buyanov

• Department of Physics and Measurements Technology, Linköping University, 581 83, Linköping, Sweden

author

P.O. Holtz

• Department of Physics and Measurements Technology, Linköping University, 581 83, Linköping, Sweden

author

G. Pozina

• Department of Physics and Measurements Technology, Linköping University, 581 83, Linköping, Sweden

author

B. Monemar

• Department of Physics and Measurements Technology, Linköping University, 581 83, Linköping, Sweden

author

J. Thordson

• Department of Physics, Chalmers University of Technology and Goteborg University 412 96, Goteborg, Sweden

author

T.G. Andersson

• Department of Physics, Chalmers University of Technology and Goteborg University 412 96, Goteborg, Sweden