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1997 | 92 | 4 | 727-732
Article title

Transport Properties of Silicon δ-Doped Gaas in High Electron Density Regime

Content
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Languages of publication
EN
Abstracts
EN
We report results for Si layers embedded in GaAs, extending from the delta-doped (δ-doped) range up to 6 monolayers derived by means of variable temperature resistivity and Hall effect measurements, secondary ion mass spectrometry and high resolution X-ray diffractometry techniques. The conductivity transition from free carrier transport in ordered δ-layers (<1 ML) to strongly-localized two-dimensional variable range hopping transport under potential fluctuation disordered conditions (>4 ML) is clearly observed. This observation is in good agreement with the secondary ion mass spectrometry and high resolution X-ray diffractometry data. Results from the intermediate case with 2-3 MLs are also discussed.
Keywords
EN
Publisher

Year
Volume
92
Issue
4
Pages
727-732
Physical description
Dates
published
1997-10
Contributors
author
  • Department of Physics and Measurements Technology, Linköping University, 581 83, Linköping, Sweden
author
  • Department of Physics and Measurements Technology, Linköping University, 581 83, Linköping, Sweden
author
  • Department of Physics and Measurements Technology, Linköping University, 581 83, Linköping, Sweden
author
  • Department of Physics and Measurements Technology, Linköping University, 581 83, Linköping, Sweden
author
  • Department of Physics, Chalmers University of Technology and Goteborg University 412 96, Goteborg, Sweden
  • Department of Physics, Chalmers University of Technology and Goteborg University 412 96, Goteborg, Sweden
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z417kz
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