Dynamics of Hot Electrons in ZnSe-ZnTe Double Barrier Heterostructures
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In this paper we perform a detailed study of the transport of hot electrons in the double barrier heterostructures with the presence of a collector barrier. This system is considered as a double barrier resonant tunneling device. The electron is described by time-dependent Schrodinger equation, which allows us to study detailed dynamics of the carriers. The influence of an energy step in the collector area of the device on the tunneling probability is investigated. The significant role of dissipation due to electron-phonon interactions is presented.
- 73.61.-r: Electrical properties of specific thin films(for optical properties of thin films, see 78.20.-e and 78.66.-w; for magnetic properties of thin films, see 75.70.-i)
- 03.65.-w: Quantum mechanics[see also 03.67.-a Quantum information; 05.30.-d Quantum statistical mechanics; 31.30.J- Relativistic and quantum electrodynamics (QED) effects in atoms, molecules, and ions in atomic physics]
- 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)
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