Coherent and Sequential Tunneling in High Magnetic Field

• Authors: A.E. Belyaev , S.A. Vitusevich , D. Maude , J.C. Portal
• Languages of publication: EN

Abstracts

EN

In the resonant tunneling diode incorporating a wide one-sided spacer layer, an oscillation picture has been studied in both polarities of the applied voltage in high magnetic field. The results lead to the conclusion that the interference between the electron waves running in the forward direction and the ones reflected at some potential step can occur in both the emitter and collector regions. The characteristic lengths corresponding to the path of the ballistic motion of electrons were estimated. An exchange enhancement of the electronic g-factor in two-dimensional systems was observed.

Keywords

EN

73.40.Gk; 85.30.Mn

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 4
• Pages: 704-708

Dates

published

1997-10

Contributors

author

A.E. Belyaev

• Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 45, 252028 Kiev, Ukraine

author

S.A. Vitusevich

• Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 45, 252028 Kiev, Ukraine

author

D. Maude

• Service National des Champs Intenses, Centre National de la Recherche Scientifique, 38042 Grenoble, France

author

J.C. Portal

• Service National des Champs Intenses, Centre National de la Recherche Scientifique, 38042 Grenoble, France