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1997 | 92 | 4 | 704-708
Article title

Coherent and Sequential Tunneling in High Magnetic Field

Content
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Languages of publication
EN
Abstracts
EN
In the resonant tunneling diode incorporating a wide one-sided spacer layer, an oscillation picture has been studied in both polarities of the applied voltage in high magnetic field. The results lead to the conclusion that the interference between the electron waves running in the forward direction and the ones reflected at some potential step can occur in both the emitter and collector regions. The characteristic lengths corresponding to the path of the ballistic motion of electrons were estimated. An exchange enhancement of the electronic g-factor in two-dimensional systems was observed.
Keywords
EN
Publisher

Year
Volume
92
Issue
4
Pages
704-708
Physical description
Dates
published
1997-10
Contributors
author
  • Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 45, 252028 Kiev, Ukraine
  • Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 45, 252028 Kiev, Ukraine
author
  • Service National des Champs Intenses, Centre National de la Recherche Scientifique, 38042 Grenoble, France
author
  • Service National des Champs Intenses, Centre National de la Recherche Scientifique, 38042 Grenoble, France
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z412kz
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