FIR Magnetooptical Measurements on MOCVD Grown InAs

• Authors: T. Andrearczyk , K. Karpierz , R. Bożek , R. Stępniewski , M. Grynberg
• Languages of publication: EN

Abstracts

EN

In this paper we report results of magnetooptical measurements done on standard InAs MOCVD layers grown on GaAs. Extremely narrow lines (half-widths of the order of 20 mT) - narrower than found by other authors in high quality MBE InAs epilayers on GaAs - as well as the lines of typical half-widths have been found both in the photoconductivity spectra and in the transmission spectra. A detailed comparison with the theoretical dependence of shallow donor and Landau level energies on magnetic field leads to the conclusion that they originate from cyclotron resonance and impurity-shifted cyclotron resonance transitions in that material.

Keywords

EN

78.30.-m; 71.55.-i; 72.40.+w

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 4
• Pages: 699-703

Dates

published

1997-10

Contributors

author

T. Andrearczyk

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

K. Karpierz

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

R. Bożek

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

R. Stępniewski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

M. Grynberg

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland