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1997 | 92 | 4 | 699-703
Article title

FIR Magnetooptical Measurements on MOCVD Grown InAs

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EN
Abstracts
EN
In this paper we report results of magnetooptical measurements done on standard InAs MOCVD layers grown on GaAs. Extremely narrow lines (half-widths of the order of 20 mT) - narrower than found by other authors in high quality MBE InAs epilayers on GaAs - as well as the lines of typical half-widths have been found both in the photoconductivity spectra and in the transmission spectra. A detailed comparison with the theoretical dependence of shallow donor and Landau level energies on magnetic field leads to the conclusion that they originate from cyclotron resonance and impurity-shifted cyclotron resonance transitions in that material.
Keywords
EN
Year
Volume
92
Issue
4
Pages
699-703
Physical description
Dates
published
1997-10
Contributors
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z411kz
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