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1997 | 92 | 1 | 255-258
Article title

Growth and Structure of Buffer Layers for High Temperature Superconducting Films

Content
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Languages of publication
EN
Abstracts
EN
We have studied thin CeO_{2} buffer layers prepared by aerosol MOCVD on (11̅02) Al_{2}O_{3} substrate at high deposition temperature, T_{d}= 900°C. A texture analysis by X-ray diffraction showed a high degree of epitaxial character of CeO_{2} films. A study of the microstructure by transmission electron microscopy revealed that the CeO_{2} films are in a relaxed state being composed of slightly misoriented blocks surrounded by dislocations. The films are smooth, giving mean square root values of the surface roughness measured by atomic force microscopy up to 1 nm.
Keywords
EN
Year
Volume
92
Issue
1
Pages
255-258
Physical description
Dates
published
1997-07
Contributors
author
  • Institute of Electrical Engineering, SAS, 842 39 Bratislava, Slovakia
author
  • Institute of Electrical Engineering, SAS, 842 39 Bratislava, Slovakia
author
  • Institute of Electrical Engineering, SAS, 842 39 Bratislava, Slovakia
author
  • Institute of Electrical Engineering, SAS, 842 39 Bratislava, Slovakia
author
  • Institut de Ciencia de Materials, CSIC, 08193-Bellaterra, Barcelona, Spain
author
  • LMGP, ENSPG, BP 46, 38402 Saint Martin d'Heres, France
author
  • LMGP, ENSPG, BP 46, 38402 Saint Martin d'Heres, France
author
  • Katholieke Univ. Leuven, Celestijnenlaan 200 D, 3001 Leuven, Belgium
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z137kz
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