EN
The results of the scanning tunneling microscopy and spectroscopy as well as atomic force microscopy measurements on the Nd_{2-x}Ce_{x}CuO_{4-y} single crystals in ambient conditions are reported. Using the scanning tunneling microscopy we were able to modify the Nd_{2-x}Ce_{x}CuO_{4-y} ab-plane in air under the conditions of sample bias voltage V_{t}=500 mV and set current I_{s}=0.3 nA. It is possible to prepare atomically flat and clean surfaces as well as to create new structures in a nanometer scale in these electron-doped materials. The similar processes were not observed during atomic force microscopy imaging.