Electron Spin Resonance Study of Thermal Defects in SrLaAlO_{4} and SrLaGaO_{4} High-T_{c} Substrates

• Authors: R. Jabłoński , A. Gloubokov , A. Pajączkowska
• Languages of publication: EN

Abstracts

EN

The effect of annealing SrLaAlO_{4} (SLA) and SrLaGaO_{4} (SLG) crystals in oxidizing and reducing atmospheres in the temperature range of 950°C-1300°C was investigated. Three kinds of anisotropic defects D_{1}, D_{2}, and E at the temperature range of 4-300 K were found. By diagonalization of orthorhombic spin-Hamiltonian parameters: |D|=0.0541(10) cm^{-1}, |E|=0.0108(10) cm^{-1}, g_{∥}=0.883(5), and g_{⊥ }=1.922(5) for D_{1} defects for SLG and SLA were calculated and they had the same values within the margin of error.

Keywords

EN

76.30.-v; 61.72.Hh; 61.72.Ji

Discipline

• 61.72.Hh: Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
• 76.30.-v: Electron paramagnetic resonance and relaxation(see also 33.35.+r Electron resonance and relaxation in atomic and molecular physics; 87.80.Lg Magnetic and paramagnetic resonance in biological physics)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 1
• Pages: 169-172

Dates

published

1997-07

Contributors

author

R. Jabłoński

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

A. Gloubokov

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

A. Pajączkowska

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 00-668 Warsaw, Poland

Identifiers

DOI

10.12693/APhysPolA.92.169