Garnet Single Crystal as Substrate Material for HTSC Films

• Authors: P. Mukhopadhyay
• Languages of publication: EN

Abstracts

EN

The use of high temperature superconductor for device application has made the compatibility of the film and substrate an important issue. Garnets having reasonably low dielectric constant and low dielectric losses can be viable low cost substrate materials for the microwave devices. Garnet single crystals like Gd_{3}Ga_{5}O_{12} (GGG), Y_{3}Ga_{5}O_{12} (YGG), Y_{3}Al_{5}O_{12} (YAG) etc. can be potential HTSC substrate materials for microwave devices. Properties of HTSC films on some of these garnet crystals are compared here.

Keywords

EN

68.55.-a; 68.60.-p; 74.76.Bz; 81.15.-z

Discipline

• 68.60.-p: Physical properties of thin films, nonelectronic
• 81.15.-z: Methods of deposition of films and coatings; film growth and epitaxy(for structure of thin films, see 68.55.-a; see also 85.40.Sz Deposition technology in microelectronics; for epitaxial dielectric films, see 77.55.Px)
• 68.55.-a: Thin film structure and morphology(for methods of thin film deposition, film growth and epitaxy, see 81.15.-z)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 1
• Pages: 147-151

Dates

published

1997-07

Contributors

author

P. Mukhopadhyay

• Advanced Centre for Research in Electronics, Indian Institute of Technology Powai, Bombay-400076, India

Identifiers

DOI

10.12693/APhysPolA.92.147