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In this paper the study of SrLaAlO_{4} and SrLaGaO_{4} single crystals using the Raman scattering method is presented. The obtained results are discussed in terms of nature of the crystallografic imperfections and point defects which might arise during the crystal growth process.
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/34, 02-668 Warszawa, Poland and Institute of Electronic Materials Technology Wólczyńska 133, 01-919 Warszawa, Poland
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bwmeta1.element.bwnjournal-article-appv92z113kz
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