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1997 | 92 | 1 | 97-103
Article title

Homoepitaxial Growth of YBa_{2}Cu_{3}O_{7} on Single Crystal YBa_{2}Cu_{3}O_{x} Substrates

Content
Title variants
Languages of publication
EN
Abstracts
EN
a- and c-axis oriented YBa_{2}Cu_{3}O_{x} (YBCO) films were epitaxially grown on (100) and (001) YBCO single-crystal substrates, respectively, by metalorganic chemical vapor deposition under the same preparation conditions including substrate temperature. As a Ba precursor Ba(DPM)_{2}-2tetraen was adopted. This precursor increased a deposition rate for YBCO films to 50 nm/h at 140°C. The substrates were formed from a 14.5x14.5x13 mm YBCO single crystal grown by a modified top-seeded crystal pulling method. Only a few surface atomic layers remained damaged after polishing and cleaning, which however did not affect the epitaxy of film growth. The crystallinity of the interface between an epilayer and substrate was much improved compared to that on usual perovskite substrates.
Keywords
EN
Year
Volume
92
Issue
1
Pages
97-103
Physical description
Dates
published
1997-07
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z108kz
Identifiers
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