Thin Film Crystallinity and Substrate Materials in Atomic Graphoepitaxy of YBa_{2}Cu_{3}O_{x}

• Authors: S. Miyazawa , M. Mukaida , M. Sasaura
• Languages of publication: EN

Abstracts

EN

The complexity of a-/c-axis oriented growth of YBa_{2}Cu_{3}O_{x} thin films is reviewed from the viewpoint of controlling a-axis preferred thin film growth. Perfectly c-axis in-plane-aligned a-axis oriented YBa_{2}Cu_{3}O_{x} thin films, or "pure" a-axis oriented films, can be grown on the (100) face of tetragonal K_{2}NiF_{4}-type substrates by template growth process. A new growth mechanism called atomic graphoepitaxy is presented as a growth model. Transmission electron microscopy reveals that the films on a (100) SrLaGaO_{4} substrate consist of domains surrounded by anti-phase and stackingfault boundaries. This domain formation can be well explained by substrate surface irregularities inherent in the SrLaGaO_{4} crystal. The formation of defects in microstructures in "pure" a-axis oriented YBa_{2}Cu_{3}O_{x} thin films is also modeled based on our atomic graphoepitaxial growth model.

Keywords

EN

74.76.Bz; 74.80.-g; 68.35.-p

Discipline

• 68.35.-p: Solid surfaces and solid-solid interfaces: structure and energetics

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 1
• Pages: 85-96

Dates

published

1997-07

Contributors

author

S. Miyazawa

• NTT System Electronics Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan

author

M. Mukaida

• NTT System Electronics Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan

author

M. Sasaura

• NTT System Electronics Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan

Identifiers

DOI

10.12693/APhysPolA.92.85