Epitaxially Induced Defects in Sr- and O-doped La_{2}CuO_{4} Thin Films Grown by MBE: Implications for Transport Properties

• Authors: J. Locquet , E. Williams
• Languages of publication: EN

Abstracts

EN

In this paper, the critical role played by various types of defects and strain relaxation mechanisms in high-T_{c} thin films is highlighted and illustrated with examples. The defects are essential for providing adequate diffusion channels for oxygen ingress during the cooling step in c-axis thin films. The operation of strain relaxation mechanisms necessitated by the lattice mismatch between film and substrate can impose a compressive or tensile biaxial pressure, which either increases or reduces the critical temperature.

Keywords

EN

61.72.Nn; 74.62.Fj; 81.15.Hi; 74.72.Dn

Discipline

• 81.15.Hi: Molecular, atomic, ion, and chemical beam epitaxy
• 74.62.Fj: Effects of pressure
• 61.72.Nn: Stacking faults and other planar or extended defects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 1
• Pages: 69-84

Dates

published

1997-07

Contributors

author

J. Locquet

• IBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland

author

E. Williams

• IBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland
• Département de Physique de la Matière Condensée, Université de Genève 1211 Genève, Switzerland

Identifiers

DOI

10.12693/APhysPolA.92.69