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Languages of publication
Abstracts
In this paper, the critical role played by various types of defects and strain relaxation mechanisms in high-T_{c} thin films is highlighted and illustrated with examples. The defects are essential for providing adequate diffusion channels for oxygen ingress during the cooling step in c-axis thin films. The operation of strain relaxation mechanisms necessitated by the lattice mismatch between film and substrate can impose a compressive or tensile biaxial pressure, which either increases or reduces the critical temperature.
Discipline
Journal
Year
Volume
Issue
Pages
69-84
Physical description
Dates
published
1997-07
Contributors
author
- IBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland
author
- IBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland
- Département de Physique de la Matière Condensée, Université de Genève 1211 Genève, Switzerland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z106kz