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1997 | 92 | 1 | 69-84
Article title

Epitaxially Induced Defects in Sr- and O-doped La_{2}CuO_{4} Thin Films Grown by MBE: Implications for Transport Properties

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EN
Abstracts
EN
In this paper, the critical role played by various types of defects and strain relaxation mechanisms in high-T_{c} thin films is highlighted and illustrated with examples. The defects are essential for providing adequate diffusion channels for oxygen ingress during the cooling step in c-axis thin films. The operation of strain relaxation mechanisms necessitated by the lattice mismatch between film and substrate can impose a compressive or tensile biaxial pressure, which either increases or reduces the critical temperature.
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Contributors
author
  • IBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland
author
  • IBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland
  • Département de Physique de la Matière Condensée, Université de Genève 1211 Genève, Switzerland
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bwmeta1.element.bwnjournal-article-appv92z106kz
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