Investigation of Crystal Growth of SrPrGaO_{4} and SrLaGaO_{4}

• Authors: R. Uecker , P. Reiche , S. Ganschow , D.-C. Uecker , D. Schultze
• Languages of publication: EN

Abstracts

EN

Single crystals of SrPrGaO_{4} and SrLaGaO_{4} have been grown using the Czochralski technique. Both materials melt incongruently at 1462°C and 1516°C. The non-stoichiometric crystals contain more strontium than the starting melts. Constitutional supercooling is retarded by special growth conditions and optimum melt composition. Because of their small mismatch both crystals are recommended as substrates for YBa_{2}Cu_{3}O_{7-x} epitaxy.

Keywords

EN

81.30.Dz; 81.10.Fq; 81.05.Je

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 1
• Pages: 23-34

Dates

published

1997-07

Contributors

author

R. Uecker

• Institute of Crystal Growth, 12489 Berlin, Germany

author

P. Reiche

• Institute of Crystal Growth, 12489 Berlin, Germany

author

S. Ganschow

• Institute of Crystal Growth, 12489 Berlin, Germany

author

D.-C. Uecker

• Institute of Applied Chemistry, Berlin, Germany

author

D. Schultze

• Federal Institute for Materials Research and Testing, Berlin, Germany