Comparative Studies of Surface Roughness of Thin Epitaxial Si Films by Computer Simulations and Experimental X-Ray and Optical Methods

• Authors: D. Żymierska , J. Auleytner , J. Domagała , A. Szewczyk , N. Dmitruk
• Languages of publication: EN

Abstracts

EN

The paper presents investigations of the surface roughness of epitaxial silicon films obtained by chemical vapour deposition with chloric and MOCVD processes. The flat surfaces of films and chemically etched surfaces of substrates were studied by optical methods as well as by X-ray reflectivity at grazing incidence. The computer simulations based on Fresnel theory were compared with the experimental results.

Keywords

EN

78.20.Ci; 68.35.Bs; 61.10.Dp

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 91
• Issue: 5
• Pages: 1025-1030

Dates

published

1997-05

Contributors

author

D. Żymierska

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Auleytner

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Domagała

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Szewczyk

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

N. Dmitruk

• Institute for Physics of Semiconductors, National Academy of Sciences of Ukraine, Prosp. Nauki 45, 252650 Kiev, Ukraine