Interference Fringes in Synchrotron Section Topography of Implanted Silicon with a Very Large Ion Range

• Authors: K. Wieteska , W. Wierzchowski , W. Graeff , K. Dłużewska
• Languages of publication: EN

Abstracts

EN

Silicon crystals implanted with 9 MeV protons to the dose of 5×10^{17} cm^{-2} were studied with X-ray topographic methods using both conventional and synchrotron radiation sources. After the implantation the crystals were thermally and electron annealed. The implantation produced large 600 μm thick shot-through layer while the total thickness of the samples was 1.6 mm. It was confirmed by means of double crystal topography that the whole crystal was elastically bent. The transmission section patterns revealed both parts of the implanted crystal separated by strong contrasts coming from the most damaged layer and distinct interference fringes which appeared on one side of the topograph only. The location of the fringes changed when the beam entered the other side of the sample. The mechanism of fringe formation was studied with numerical integration of the Takagi-Taupin equations, especially studying the intensity distribution in the diffraction plane. The simulations reproduced the location of the fringes in different geometries and indicate that they can be caused both by variable crystal curvature and variable ion dose.

Keywords

EN

61.10.-i; 61.80.-x

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 91
• Issue: 5
• Pages: 1021-1024

Dates

published

1997-05

Contributors

author

K. Wieteska

• Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland

author

W. Wierzchowski

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

W. Graeff

• HASYLAB at DESY, Notkestr. 85, 22603 Hamburg, Germany

author

K. Dłużewska

• Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland