Physical Properties of AlGaAs Epilayers Subjected to High Pressure - High Temperature Treatment

• Authors: W. Szuszkiewicz , W. Gębicki , J. Bąk-Misiuk , J. Domagała , M. Leszczyński , J. Hartwig
• Languages of publication: EN

Abstracts

EN

AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment. In order to study the influence of high pressure - high temperature treatment on the physical properties of the AlGaAs layers, X-ray, electron transport and Raman scattering measurements were performed at room temperature. The observed changes in the lattice parameter, Raman spectra and free-carrier concentration were related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which were visible on the synchrotron X-ray topographs after high pressure - high temperature treatment.

Keywords

EN

73.30.+y; 81.40.-z; 73.60.Br

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 91
• Issue: 5
• Pages: 1003-1007

Dates

published

1997-05

Contributors

author

W. Szuszkiewicz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

W. Gębicki

• Warsaw Technical University, Koszykowa 75, 00-662 Warsaw, Poland

author

J. Bąk-Misiuk

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Domagała

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Leszczyński

• High Pressure Research Center, Polish Academy of Sciences, Warsaw, Poland

author

J. Hartwig

• European Synchrotron Radiation Facility, BP220, 38043 Grenoble Cedex, France