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1997 | 91 | 5 | 1003-1007
Article title

Physical Properties of AlGaAs Epilayers Subjected to High Pressure - High Temperature Treatment

Content
Title variants
Languages of publication
EN
Abstracts
EN
AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment. In order to study the influence of high pressure - high temperature treatment on the physical properties of the AlGaAs layers, X-ray, electron transport and Raman scattering measurements were performed at room temperature. The observed changes in the lattice parameter, Raman spectra and free-carrier concentration were related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which were visible on the synchrotron X-ray topographs after high pressure - high temperature treatment.
Keywords
EN
Year
Volume
91
Issue
5
Pages
1003-1007
Physical description
Dates
published
1997-05
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv91z528kz
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