High-Pressure Diffraction Study of Ga_{1-x}Al_{x}As

• Authors: W. Paszkowicz , E. Dynowska , Z.R. Żytkiewicz , D. Dobosz , J.W. Otto
• Languages of publication: EN

Abstracts

EN

The Ga_{1-x}Al_{x}As sample of x=0.5 was prepared from a high quality single crystal grown by electroepitaxy on GaAs. The high-pressure diffraction experiments were performed using a diamond anvil cell and a germanium solid state detector. The zinc-blende phase is stable up to about 17.5 GPa on uploading. A high-pressure phase manifests itself at about 17 GPa, a complete phase change occurs at 18.7 GPa. On downloading, the zinc-blende phase reappears at about 10 GPa. The powder pattern of the high-pressure phase shows some similarities with the GaAs high pressure phases.

Keywords

EN

64.30.+t; 62.50.+p; 64.70.Kw

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 91
• Issue: 5
• Pages: 993-996

Dates

published

1997-05

Contributors

author

W. Paszkowicz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Dynowska

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

Z.R. Żytkiewicz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

D. Dobosz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

J.W. Otto

• DESY/HASYLAB, Notkestrasse 85, 22603 Hamburg, Germany