Defect Structure of Pressure Treated Czochralski Grown Silicon Investigated by X-Ray Topography and Diffractometry

• Authors: A. Misiuk , J. Härtwig , E. Prieur , M. Ohler , J. Bąk-Misiuk , J. Domagała , B. Surma
• Languages of publication: EN

Abstracts

EN

The defect structure of Czochralski grown silicon single crystals annealed at 870-1400 K under hydrostatic pressure up to 1 GPa was investigated by conventional and synchrotron radiation X-ray topography and by reciprocal space mapping. Hydrostatic pressure promotes oxygen precipitation from oversaturated Si-O solid solution and the creation of structural defects.

Keywords

EN

61.72.Yx; 81.40.Vw; 61.10.-i

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 91
• Issue: 5
• Pages: 987-991

Dates

published

1997-05

Contributors

author

A. Misiuk

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Härtwig

• European Synchrotron Radiation Facility, BP 220, 38043 Grenoble, France

author

E. Prieur

• European Synchrotron Radiation Facility, BP 220, 38043 Grenoble, France

author

M. Ohler

• European Synchrotron Radiation Facility, BP 220, 38043 Grenoble, France

author

J. Bąk-Misiuk

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Domagała

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

B. Surma

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland