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1997 | 91 | 5 | 987-991
Article title

Defect Structure of Pressure Treated Czochralski Grown Silicon Investigated by X-Ray Topography and Diffractometry

Content
Title variants
Languages of publication
EN
Abstracts
EN
The defect structure of Czochralski grown silicon single crystals annealed at 870-1400 K under hydrostatic pressure up to 1 GPa was investigated by conventional and synchrotron radiation X-ray topography and by reciprocal space mapping. Hydrostatic pressure promotes oxygen precipitation from oversaturated Si-O solid solution and the creation of structural defects.
Keywords
EN
Publisher

Year
Volume
91
Issue
5
Pages
987-991
Physical description
Dates
published
1997-05
Contributors
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • European Synchrotron Radiation Facility, BP 220, 38043 Grenoble, France
author
  • European Synchrotron Radiation Facility, BP 220, 38043 Grenoble, France
author
  • European Synchrotron Radiation Facility, BP 220, 38043 Grenoble, France
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv91z525kz
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