Structural Perfection of Czochralski Grown Silicon Crystals Annealed above 1500 K under Hydrostatic Pressure

• Authors: L. Datsenko , V. Khrupa , S. Krasulya , A. Misiuk , J. Härtwig , B. Surma
• Languages of publication: EN

Abstracts

EN

The structural perfection of Czochralski grown silicon crystals annealed at 1580-1620 K under hydrostatic pressure up to 10^{9} Pa was investigated by X-ray diffractometry and topography supplemented by the method of absorption of infrared rays. Such treatment suppresses dissolution of oxygen-related defects. From the static Debye-Waller factor dependence on the reflection order it was concluded that large clusters or dislocation loops are the dominant type of defects for most of the samples.

Keywords

EN

81.40.-z; 81.05.Cy

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 91
• Issue: 5
• Pages: 929-933

Dates

published

1997-05

Contributors

author

L. Datsenko

• Institute of Semiconductor Physics, Prospect Nauki 45, 252028 Kiev, Ukraine

author

V. Khrupa

• Institute of Semiconductor Physics, Prospect Nauki 45, 252028 Kiev, Ukraine

author

S. Krasulya

• Institute of Semiconductor Physics, Prospect Nauki 45, 252028 Kiev, Ukraine

author

A. Misiuk

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Härtwig

• European Synchrotron Radiation Facility, 38043 Grenoble, France

author

B. Surma

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland