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1997 | 91 | 5 | 929-933
Article title

Structural Perfection of Czochralski Grown Silicon Crystals Annealed above 1500 K under Hydrostatic Pressure

Content
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Languages of publication
EN
Abstracts
EN
The structural perfection of Czochralski grown silicon crystals annealed at 1580-1620 K under hydrostatic pressure up to 10^{9} Pa was investigated by X-ray diffractometry and topography supplemented by the method of absorption of infrared rays. Such treatment suppresses dissolution of oxygen-related defects. From the static Debye-Waller factor dependence on the reflection order it was concluded that large clusters or dislocation loops are the dominant type of defects for most of the samples.
Keywords
EN
Publisher

Year
Volume
91
Issue
5
Pages
929-933
Physical description
Dates
published
1997-05
Contributors
author
  • Institute of Semiconductor Physics, Prospect Nauki 45, 252028 Kiev, Ukraine
author
  • Institute of Semiconductor Physics, Prospect Nauki 45, 252028 Kiev, Ukraine
author
  • Institute of Semiconductor Physics, Prospect Nauki 45, 252028 Kiev, Ukraine
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • European Synchrotron Radiation Facility, 38043 Grenoble, France
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv91z516kz
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