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1997 | 91 | 5 | 911-917
Article title

Effect of Doping on Ga_{1-x}Al_{x}As Structural Properties

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EN
Abstracts
EN
The microstructure of Ga_{1-x}Al_{x}As layers was studied using methods of high resolution diffractometry and topography. Mapping out the reciprocal space in the vicinity of 004 reciprocal lattice points shows a difference in diffuse scattering between doped and undoped layers. This result is attributed to a difference in a point-defect density. From the measurements of lattice parameters at different temperature it was found that the thermal expansion coefficients for the doped layers are higher than for the undoped ones. This phenomenon is attributed to the change of the anharmonic part of lattice vibrations by free electrons or/and point defects.
Keywords
Publisher

Year
Volume
91
Issue
5
Pages
911-917
Physical description
Dates
published
1997-05
Contributors
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
  • High-Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland
author
  • Institute of Electron Technology, Al. Lotników 32, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, Al. Lotników 32, 02-668 Warsaw, Poland
author
  • ESRF, B.P. 220, 38043 Grenoble, France
author
  • ESRF, B.P. 220, 38043 Grenoble, France
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv91z513kz
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