X-Ray Photoelectron Study of Yb-Doped InP

• Authors: R.J. Iwanowski , J.W. Sobczak , Z. Kaliński
• Languages of publication: EN

Abstracts

EN

X-ray photoelectron spectra of core levels are reported for InP:Yb. Crystalline InP, doped with Yb to a level of 0.5 at.%, was grown by the synthesized solute diffusion method. An analysis of the core-level spectra of the constituent components, i.e. In 3d_{5/2} and P 2p, revealed a minor influence of the surface oxide species, mainly in the phosphate-like form. The spectrum of the Yb 4d core level was also recorded. The energy of the Yb 4d_{3/2} peak was found identical to that in Yb metal, whereas the 4d_{5/2} peak was found to be shifted to higher binding energies. This effect was found comparable to the case of advanced oxidation of Yb thus confirming its high reactivity, even as a bulk dopant. The data give also a rare experimental example of detection of bulk dopant atoms in a semiconductor matrix by X-ray photoelectron spectroscopy at the limit of detectability.

Keywords

EN

79.60.Bm; 71.55.Eq

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 91
• Issue: 4
• Pages: 809-813

Dates

published

1997-04

Contributors

author

R.J. Iwanowski

• Institute of Physics, Polish Academy of Sciences, Al.Lotników 32/46, 02-668 Warsaw, Poland

author

J.W. Sobczak

• Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw, Poland

author

Z. Kaliński

• Institute of Physics, Polish Academy of Sciences, Al.Lotników 32/46, 02-668 Warsaw, Poland