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1997 | 91 | 4 | 809-813
Article title

X-Ray Photoelectron Study of Yb-Doped InP

Content
Title variants
Languages of publication
EN
Abstracts
EN
X-ray photoelectron spectra of core levels are reported for InP:Yb. Crystalline InP, doped with Yb to a level of 0.5 at.%, was grown by the synthesized solute diffusion method. An analysis of the core-level spectra of the constituent components, i.e. In 3d_{5/2} and P 2p, revealed a minor influence of the surface oxide species, mainly in the phosphate-like form. The spectrum of the Yb 4d core level was also recorded. The energy of the Yb 4d_{3/2} peak was found identical to that in Yb metal, whereas the 4d_{5/2} peak was found to be shifted to higher binding energies. This effect was found comparable to the case of advanced oxidation of Yb thus confirming its high reactivity, even as a bulk dopant. The data give also a rare experimental example of detection of bulk dopant atoms in a semiconductor matrix by X-ray photoelectron spectroscopy at the limit of detectability.
Keywords
EN
Year
Volume
91
Issue
4
Pages
809-813
Physical description
Dates
published
1997-04
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv91z427kz
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