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1997 | 91 | 4 | 793-796
Article title

Adsorption of Oxygen on HF-Etched Si(111) Surfaces: XPS Study

Content
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Languages of publication
EN
Abstracts
EN
X-ray photoelectron spectroscopy studies of the Si(111) surfaces, after dilute HF etching and methanol rinse, are reported. These included a detailed analysis of the main core-levels (Si 2p, O 1s) and the valence band spectra. The observed asymmetry of the O 1s lines was attributed to two contributing subpeaks: the main (1) and the minor one (2), shifted ≈ 1.5 eV to higher binding energies. Their relative intensity was found to depend on the air exposure time and on the take-off angle. The peaks were assigned to two different positions of surface oxygen: (1) O chemisorbed with methoxy group, (2) bridging O atom. The valence band X-ray photoelectron spectroscopy spectra reveal the influence of surface states induced by the "chemisorbed O"-Si bond.
Keywords
EN
Publisher

Year
Volume
91
Issue
4
Pages
793-796
Physical description
Dates
published
1997-04
Contributors
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv91z424kz
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