Cr 3d Surface and Bulk States in Sn_{1-x}Cr_{x}Te/Cr Crystals

E. Guziewicz; K. Szamota-Sadowska; B.J. Kowalski; E. Grodzicka; T. Story; B.A. Orłowski; R.L. Johnson

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Journal

Acta Physica Polonica A

1997 | 91 | 4 | 783-787

Article title

Cr 3d Surface and Bulk States in Sn_{1-x}Cr_{x}Te/Cr Crystals

Authors

E. Guziewicz , K. Szamota-Sadowska , B.J. Kowalski , E. Grodzicka , T. Story , B.A. Orłowski , R.L. Johnson

Content

http://przyrbwn.icm.edu.pl/APP/PDF/91/a091z4p22.pdf [remote]

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Abstracts

We report a new approach to investigate metal-semiconductor interface formation. Photoemission spectroscopy was applied in order to investigate the clean surface of a Sn_{0.97}Cr_{0.03} Te crystal and to observe its changes under sequential deposition of small amounts of Cr atoms. In order to analyse the Cr 3d contribution to the valence band, the Fano-type resonance tuned to the Cr 3p-3d transition was used. The experiment was designed to follow the Sn_{0.97}Cr_{0.03} Te/Cr interface formation process. At the clean Sn_{0.97}Cr_{0.03}Te surface, the Cr 3d states contribution to the valence band was found to be positioned 0.8 eV below the Fermi level. After the Cr deposition processes the contribution shifted to a higher binding energy and another contribution 5.8 eV below the Fermi level was also observed.

Keywords

68.35.Fx 79.60.-i

Publisher

Institute of Physics, Polish Academy of Sciences

Journal

Acta Physica Polonica A

Year

1997

Volume

Issue

Pages

783-787

Physical description

Dates

published

1997-04

References

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Publication order reference

YADDA identifier

bwmeta1.element.bwnjournal-article-appv91z422kz

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