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1997 | 91 | 4 | 783-787
Article title

Cr 3d Surface and Bulk States in Sn_{1-x}Cr_{x}Te/Cr Crystals

Content
Title variants
Languages of publication
EN
Abstracts
EN
We report a new approach to investigate metal-semiconductor interface formation. Photoemission spectroscopy was applied in order to investigate the clean surface of a Sn_{0.97}Cr_{0.03} Te crystal and to observe its changes under sequential deposition of small amounts of Cr atoms. In order to analyse the Cr 3d contribution to the valence band, the Fano-type resonance tuned to the Cr 3p-3d transition was used. The experiment was designed to follow the Sn_{0.97}Cr_{0.03} Te/Cr interface formation process. At the clean Sn_{0.97}Cr_{0.03}Te surface, the Cr 3d states contribution to the valence band was found to be positioned 0.8 eV below the Fermi level. After the Cr deposition processes the contribution shifted to a higher binding energy and another contribution 5.8 eV below the Fermi level was also observed.
Keywords
EN
Year
Volume
91
Issue
4
Pages
783-787
Physical description
Dates
published
1997-04
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv91z422kz
Identifiers
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