Correlations between Electronic and Magnetic Properties in Semimagnetic Semiconductors
Languages of publication
Magnetic properties of IV-VI semimagnetic (diluted magnetic) semiconductors with Mn or with Gd can be controlled by changing the electronic parameters such as carrier concentration, Fermi level position or density of states at the Fermi level. The examples of these effects are the carrier concentration induced paramagnet-ferromagnet and ferromagnet-spin glass transitions in PbSnMnTe and the Fermi level position controlled Gd-Gd exchange interactions in SnGdTe.
Publication order reference