PL EN


Preferences help
enabled [disable] Abstract
Number of results
1996 | 90 | 5 | 1113-1117
Article title

Photoelectron Spectroscopy of II-VI Semiconductor Heterostructures

Content
Title variants
Languages of publication
EN
Abstracts
EN
We are growing ZnSe, ZnS and CdSe layers epitaxially on GaAs(001) substrates by atomic layer epitaxy and molecular beam epitaxy. The substrates are prepared by a H-plasma method in order to obtain a sharp interface between substrate and layer. The quality of our samples is controlled by reflection high energy diffraction and X-ray diffraction. Furthermore, the samples are characterized in situ by photoelectron spectroscopy. We observe resonant Zn 3d^{8} and Cd 4d^{8} satellites, which are used to check the layer quality. As a result, the valence band offsets of CdSe/ZnSe and ZnSe/CdSe were obtained. The values are ΔE_{v}(ZnSe/CdSe) = -(0.13 ± 0.07) eV and ΔE_{v}(CdSe/ZnSe) = -(0.13 ± 0.07) eV, which confirm the commutativity rule.
Keywords
EN
Publisher

Year
Volume
90
Issue
5
Pages
1113-1117
Physical description
Dates
published
1996-11
Contributors
author
  • Institut für Festkorperphysik, Universität Regensburg, Universitätsstr. 31, Germany
author
  • Institut für Festkorperphysik, Universität Regensburg, Universitätsstr. 31, Germany
author
  • Institut für Festkorperphysik, Universität Regensburg, Universitätsstr. 31, Germany
author
  • Institut für Festkorperphysik, Universität Regensburg, Universitätsstr. 31, Germany
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z558kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.