Photoelectron Spectroscopy of II-VI Semiconductor Heterostructures

• Authors: M. Wörz , M. Hampel , R. Flierl , W. Gebhardt
• Languages of publication: EN

Abstracts

EN

We are growing ZnSe, ZnS and CdSe layers epitaxially on GaAs(001) substrates by atomic layer epitaxy and molecular beam epitaxy. The substrates are prepared by a H-plasma method in order to obtain a sharp interface between substrate and layer. The quality of our samples is controlled by reflection high energy diffraction and X-ray diffraction. Furthermore, the samples are characterized in situ by photoelectron spectroscopy. We observe resonant Zn 3d^{8} and Cd 4d^{8} satellites, which are used to check the layer quality. As a result, the valence band offsets of CdSe/ZnSe and ZnSe/CdSe were obtained. The values are ΔE_{v}(ZnSe/CdSe) = -(0.13 ± 0.07) eV and ΔE_{v}(CdSe/ZnSe) = -(0.13 ± 0.07) eV, which confirm the commutativity rule.

Keywords

EN

79.60.Jv

Discipline

• 79.60.Jv: Interfaces; heterostructures; nanostructures

• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 5
• Pages: 1113-1117

Dates

published

1996-11

Contributors

author

M. Wörz

• Institut für Festkorperphysik, Universität Regensburg, Universitätsstr. 31, Germany

author

M. Hampel

• Institut für Festkorperphysik, Universität Regensburg, Universitätsstr. 31, Germany

author

R. Flierl

• Institut für Festkorperphysik, Universität Regensburg, Universitätsstr. 31, Germany

author

W. Gebhardt

• Institut für Festkorperphysik, Universität Regensburg, Universitätsstr. 31, Germany

Identifiers

DOI

10.12693/APhysPolA.90.1113