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Number of results
1996 | 90 | 5 | 1113-1117

Article title

Photoelectron Spectroscopy of II-VI Semiconductor Heterostructures

Content

Title variants

Languages of publication

EN

Abstracts

EN
We are growing ZnSe, ZnS and CdSe layers epitaxially on GaAs(001) substrates by atomic layer epitaxy and molecular beam epitaxy. The substrates are prepared by a H-plasma method in order to obtain a sharp interface between substrate and layer. The quality of our samples is controlled by reflection high energy diffraction and X-ray diffraction. Furthermore, the samples are characterized in situ by photoelectron spectroscopy. We observe resonant Zn 3d^{8} and Cd 4d^{8} satellites, which are used to check the layer quality. As a result, the valence band offsets of CdSe/ZnSe and ZnSe/CdSe were obtained. The values are ΔE_{v}(ZnSe/CdSe) = -(0.13 ± 0.07) eV and ΔE_{v}(CdSe/ZnSe) = -(0.13 ± 0.07) eV, which confirm the commutativity rule.

Keywords

EN

Year

Volume

90

Issue

5

Pages

1113-1117

Physical description

Dates

published
1996-11

Contributors

author
  • Institut für Festkorperphysik, Universität Regensburg, Universitätsstr. 31, Germany
author
  • Institut für Festkorperphysik, Universität Regensburg, Universitätsstr. 31, Germany
author
  • Institut für Festkorperphysik, Universität Regensburg, Universitätsstr. 31, Germany
author
  • Institut für Festkorperphysik, Universität Regensburg, Universitätsstr. 31, Germany

References

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv90z558kz
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