Impurity-Scattering Limited Electron Mobility in Free Standing Quantum Wires: Image Charge Effect

• Authors: P. Vagner , M. Mos̆ko
• Languages of publication: EN

Abstracts

EN

We calculate the impurity-scattering limited mobility of the one-dimensional electron gas in a rectangular GaAs quantum wire confined in the vertical (growth) direction by n-modulation doped AlGaAs layers and free standing along the transverse direction. The scattering potential of the ionized impurity is obtained by solving the Poisson equation with z-dependent electrostatic permittivity in order to take into account the image charge effect due to the abrupt permittivity change at the GaAs/air interfaces. We show that the "image impurity" scattering tends to drastically reduce the electron mobility for sufficiently small (≈10 nm) transverse wire widths.

Keywords

EN

73.50.-h; 73.50.Bk

Discipline

• 73.50.Bk: General theory, scattering mechanisms
• 73.50.-h: Electronic transport phenomena in thin films(for electronic transport in mesoscopic systems, see 73.23.-b; see also 73.40.-c Electronic transport in interface structures; for electronic transport in nanoscale materials and structures, see 73.63.-b)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 5
• Pages: 1103-1107

Dates

published

1996-11

Contributors

author

P. Vagner

• Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 842 39 Bratislava, Slovakia

author

M. Mos̆ko

• Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 842 39 Bratislava, Slovakia

Identifiers

DOI

10.12693/APhysPolA.90.1103